elektronische bauelemente ssg4403 p-ch enhancement mode power mosfet -6.1 a, -30 v, r ds(on) 50 m ? 29-oct-2009 rev. b page 1 of 3 a h b m d c j k f l e n g 4403sc 1 s s s g d d d d = date code 2 3 4 5 6 7 8 rohs compliant product a suffix of -c specifies halogen & lead-free description the ssg4403 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5v. the device is suitable for use as a load switch or in pwm applications. features low gate charge lower on-resistance fast switching characteristic package dimensions absolute maximum ratings parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 12 v continuous drain current 3 i d @ta=25 -6.1 a continuous drain current 3 i d @ta=70 -5.1 a pulsed drain current 1 i dm -60 a total power dissipation p d @ta=25 2.5 w linear derating factor 0.02 w/ operating junction and storage temperature range tj, tstg -55 ~ +150 thermal data thermal resistance junction-ambient 3 max. r j-amb 50 /w p-channel electrical characteristics (tj = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage bv dss -30 - - v v gs =0, i d =-250 a gate threshold voltage v gs(th) -0.7 - -1.3 v v ds =v gs , i d =-250 a forward transconductance g fs - 11 - s v ds =-5v, i d =-5a gate-source leakage current i gss - - 100 na v gs = 12v drain-source leakage current(tj=25 ) - - -1 a v ds =-30v, v gs =0 drain-source leakage current(tj=55 ) i dss - - -5 a v ds =-24v, v gs =0 - - 50 v gs =-10v, i d =-6.1a - - 61 v gs =-4.5v, i d =-5a static drain-source on-resistance 2 r ds(on) - - 117 m v gs =-2.5 v, i d =-1 a total gate charge 2 q g - 9.4 - gate-source charge q gs - 2 - gate-drain (miller) change q gd - 3 - nc i d =-5 a v ds =-15 v v gs =-4.5 v turn-on delay time 2 t d(on) - 7.6 - rise time t r - 8.6 - turn-off delay time t d(off) - 44.7 - fall time t f - 16.5 - ns v ds =-15 v i d =-10 v r g =6 r l =2.4 input capacitance c iss - 940 - output capacitance c oss - 104 - reverse transfer capacitance c rss - 73 - pf v gs =0 v v ds =-15 v f=1.0 mhz source-drain diode forward on voltage 2 v sd - - -1.0 v i s =-1a, v gs =0 v continuous source current (body diode) i s - - -4.2 a reverse recovery time 2 t rr - 22.7 - ns reverse recovery charge q rr - 15.9 - nc i s = -5a, v gs = 0v, dl/dt = 100a/ s notes: 1. pulse width limited by max. junction temp erature. 2. pulse width Q 300 s, duty cycle Q 2%. 3. surface mounted on 1 in 2 copper pad of fr4 board; 125 c/w when mounted on min. copper pad. sop-8 millimeter millimeter ref. min. max. ref. min. max. a 5.80 6. 20 h 0 . 35 0 .4 9 b 4 . 80 5.0 0 j 0. 375 ref. c 3 .80 4 . 0 0 k 45 d 0 8 l 1.35 1. 75 e 0.40 0.90 m 0.10 0 . 25 f 0. 19 0. 25 n 0.25 ref. g 1.27 typ. source drain gate
elektronische bauelemente ssg4403 p-ch enhancement mode power mosfet -6.1 a, -30 v, r ds(on) 50 m ? 29-oct-2009 rev. b page 2 of 3 characteristic curve
elektronische bauelemente ssg4403 p-ch enhancement mode power mosfet -6.1 a, -30 v, r ds(on) 50 m ? 29-oct-2009 rev. b page 3 of 3 characteristic curve (contd)
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